SSM0410 datasheet(2/4 Pages) SECOS

2 / 4 page

SSM0410

3.5 A, 100V, RDS(ON) 220mΩ

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

11-May-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

Drain-Source Breakdown Voltage

BVDSS

100

VGS=0V, ID =1mA

Gate Threshold Voltage

VGS(TH)

1.0

2.5

VDS= 10V, ID =1mA

Forward Transconductance

gFS

4.0

VDS=10V, ID=2.5A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

Drain-Source Leakage Current

IDSS

μA

VDS=100V, VGS=0V

Drain-Source On Resistance

RDS(ON)

0.22

Ω

VGS=10V, ID=2.6A

0.28

VGS=5.0V, ID=1.7A

Total Gate Charge

11.2

V GS=5V

VDS=80V

I D=3.5A

Gate-Source Charge

Qgs

4.4

Gate-Drain (“Miller”) Charge

Qgd

3.0

Turn-on Delay Time

Td(ON)

VDD=30V

V GS=10V

I D=1A

RG=6Ω, RL=30Ω

Rise Time

9.4

Turn-off Delay Time

Td(OFF)

26.8

Fall Time

2.6

Input Capacitance

CISS

975

VDS=25V

VGS=0V

f=1MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SOURCE-DRAIN DIODE

Forward On Voltage

VSD

1.5

VGS=0V, IS=3.5A

Note:

1. Pulse width limited by Maximum junction temperature.

2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%

3. Surface mounted on 1 in

2 copper pad of FR4 board; 120°C/W when mounted on Min. copper pad.

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