STT3457P datasheet(2/4 Pages) SECOS

2 / 4 page

STT3457P

-4 A, -30 V, RDS(ON) 60 m

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

06-Jan-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= 250μA

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -16V, VGS= 0V

-5

VDS= -20V, VGS= 0V, TJ= 55°C

On-State Drain Current

ID(on)

-20

VDS = -5V, VGS= -4.5V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -4.0A,TJ= 55°C

VGS= -10V, ID= -4.0A

VGS= -4.5V, ID= -3.4A

Forward Transconductance

gfs

VDS= -5V, ID= -3.4A

Diode Forward Voltage

VSD

-0.8

IS= 1.3A, VGS= 0V

Dynamic

Total Gate Charge

6.4

VDS= -20V, VGS= -5V,

ID= -4.0A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

3.8

Turn-on Delay Time

Td(on)

VDD= -20V, VGEN= -10V,

RL= 6, ID= -1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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