KTK951S datasheet(1/3 Pages) KEC

Il numero della parte	KTK951S

Spiegazioni elettronici	N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	KEC [KEC(Korea Electronics)]

Homepage	http://www.keccorp.com

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1 / 3 page

2009. 5. 15

1/3

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0

LOW FREQUENCY /

HIGH FREQUENCY AMPLIFIER APPLICATION

FEATURES

・Low Gain Controlled Amplifier

High Transter Admittance

Maximum Ratings (Ta=25

)

Type Name

J

Marking

Lot No.

IDSS Rank

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Gate-Drain Voltage

VGDO

-22

V

Gate-Source Voltage

VGSO

-22

V

Gate Current

IG

10

mA

Drain Current

ID

50

mA

Drain Power Dissipation

PD

150

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55~150

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Gate-Source Breakdown Voltage

V(BR)GSS

VDS=0V, IG=-10㎂

-22

-

V

Gate-Source Cut-off Voltage

VGS(OFF)

VDS=5V, ID=10㎂

0

-

-2.5

V

Gate Leakage Currnet

IGSS

VDS=0V, VGS=-15V

-

10

A

Drain Current

IDSS(Note)

VDS=5V, VGS=0V

12

-

40

mA

Forward Transfer Admittance

yfs

VDS=5V, VGS=0V, f=1kHz

20

30

-

mS

Input Capacitance

Ciss

VDS=5V, VGS=0V, f=1MHz

-

9

-

pF

KTK951S

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

DIM

MILLIMETERS

1. SOURCE

2. DRAIN

3. GATE

SOT-23

A

B

C

D

E

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P

7

2.93 0.20

+_

Note : IDSS Classification C : 12~22, D : 18~30, E : 27~40

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