L6229Q datasheet(9/28 Pages) STMICROELECTRONICS

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L6229Q

Electrical characteristics

Doc ID 15209 Rev 3

9/28

fCP

Charge pump frequency

TJ = -25 °C to 125 °C

(1)

0.6

MHz

PWM comparator and monostable

IRCOFF

Source current at pin RCOFF

VRCOFF = 2.5 V

3.5

5.5

VOFFSET

Offset voltage on sense comparator (3)

Vref = 0.5 V

±5

tprop

Turn OFF propagation delay (4)

Vref = 0.5 V

500

tblank

Internal blanking time on sense

comparator

1µs

tON(min)

Minimum on time

2.5

µs

tOFF

PWM recirculation time

ROFF = 20 kΩ; COFF = 1 nF

μs

ROFF = 100 kΩ; COFF = 1 nF

μs

IBIAS

Input bias current at pin VREF

µA

Tacho monostable

IRCPULSE

Source current at pin RCPULSE

VRCPULSE = 2.5 V

3.5

5.5

tPULSE

Monostable of time

RPUL = 20 kΩ; CPUL = 1 nF

μs

RPUL = 100 kΩ; CPUL = 1 nF

μs

RTACHO

Open drain ON resistance

Over current detection and protection

ISOVER

Supply overcurrent protection threshold TJ = -25 to 125 °C

(2)

2.8

3.55

ROPDR

Open drain ON resistance

IDIAG = 4 mA

IOH

OCD high level leakage current

VDIAG = 5 V

µA

tOCD(ON)

OCD turn-ON delay time (4)

IDIAG = 4 mA; CDIAG < 100 pF

200

tOCD(OFF)

OCD turn-OFF delay time (4)

IDIAG = 4 mA; CDIAG < 100 pF

100

Tested at 25 °C in a restricted range and guaranteed by characterization

See Figure 3.

Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin VREF.

See Figure 4.

Table 6.

Electrical characteristics (continued)

(VS = 48 V, TA = 25 °C, unless otherwise specified)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

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