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SF20D200D2 Scheda tecnica(PDF) 2 Page - KODENSHI_AUK CORP. |
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SF20D200D2 Scheda tecnica(HTML) 2 Page - KODENSHI_AUK CORP. |
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2 / 5 page ![]() KSD-D6S011-000 2 Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 200 V Maximum average forward rectified current per diode IF(AV) 10 A total device 20 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range Tstg -45℃ to +150℃ ℃ Maximum operating junction temperature Tj 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 3.0 ℃ /W total device 2.6 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM (1) IFM = 10A Tj=25℃ - - 0.98 V Tj=125℃ - - 0.88 V Reverse leakage current IRM (1) VR = VRRM Tj=25℃ - - 25 uA Tj=125℃ - - 500 uA Reverse recovery time trr IF = 1A, di/dt =-100 A/us - - 30 ns Junction capacitance Cj VR = 4VDC, f=1MHz - 150 - pF Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% SF20D200D2 |
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