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Midium Power Transistors (50V / 3A)

MP6X13



Structure



Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor



Features

1) Low saturation voltage

2) High speed switching



Applications

Low Frequency Amplifier Driver



Inner circuit

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta = 25

C)

　

<It is the same ratings for the Tr.1 and Tr.2>

Symbol

Limits

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

6V

Continuous

3A

Pulsed

6A

2.0

W/Total

1.4

W/Element

Junction temperature

150

C

Range of storage temperature

-55 to 150

C

*1 Pw=10ms, 1Pulse

*2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board.

Power dissipation



Packaging specifications

Type

Parameter

Collector current

*1

*2

*2

(1)

(2)

(3)

(4)

(5)

(6)

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

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2010.11 - Rev.A