MP6Z13 datasheet(1/8 Pages) ROHM

Il numero della parte	MP6Z13

Spiegazioni elettronici	Midium Power Transistors

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Produttore elettronici	ROHM [Rohm]

Homepage	http://www.rohm.com

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Data Sheet

www.rohm.com

Midium Power Transistors (±50V / ±3A)

MP6Z13



Structure



Dimensions (Unit : mm)

NPN/PNP Silicon epitaxial planar transistor



Features

1) Low saturation voltage, typically

VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)

VCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)

2) High speed switching



Applications



Inner circuit (Unit : mm)

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta = 25

C)

<Tr.1>

Symbol

Limits

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

6V

DC

IC

3A

Pulsed

ICP

6A

<Tr.2>

Symbol

Limits

Unit

Collector-base voltage

VCBO

-50

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-6

V

DC

IC

-3

A

Pulsed

ICP

-6

A

<Tr.1 and Tr.2>

Symbol

Limits

Unit

PD

2.0

W/Total

PD

1.4

W/Element

Junction temperature

Tj

150

C

Range of storage temperature

Tstg

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.

Low Frequency Amplifier

Driver



Packaging specifications

Type

Parameter

Collector current

Power dissipation

Parameter

Collector current

Parameter

*1

*2

*1

MPT6

(Dual)

(1)

(2)

(3)

(6)

(5)

(4)

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

(1)

(2)

(3)

(4)

(5)

(6)

Tr.1

Tr.2

1/7

2011.02 - Rev.A

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