1 of 8

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Ordering Information

BiFET HBT

LDMOS

0

1

2

3

4

5

6

7

3

4

5

6

7

8

9

10

0

2

4

6

8

10

121416

18

Freq (GHz)

Freq

Pout

Evaluatio n Board

RFVC1802

WIDEBAND MMIC VCO WITH BUFFER

AMPLIFIER, 4GHZ TO 8GHZ

RFMD’s RFVC1802 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT

MMIC with integrated VCO core and RF output buffer. The part operates from a sin-

RFVC1802 is a RoHS Compliant, compact QFN, 4mmx4mm package that offers

low phase noise and low power consumption.

Features



Wideband Performance





External Resonator Not Required



Single Bias Supply: +5V at 53mA



Output Phase Noise: -99dBc/Hz

at 100kHz



Low Profile 4mmx4mm QFN



RoHS Compliant

Applications



Military - Radar,

Communications, ECM/IED



Satcomm - Communication

Modems



Test Instrumentation



Industrial/Medical Equipment

DS100615



Package: QFN, 4mmx4mmx1.1mm

RFVC1802

Wideband

MMIC VCO

with Buffer

Amplifier,

4GHz to 8GHz

RFVC1802S2

2 pc Sample Bag

RFVC1802PCK-410 Fully Assembled Evaluation Board

RFVC1802

5 pcs or more