2N6660CSM4

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be

both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab

encourages customers to verify that datasheets are current before placing orders.

DOC 7777, ISSUE 2

Parameter

Test Conditions

Min. Typ.

Max.

Unit

V

(BR)DSS

Drain – Source Breakdown Voltage

V

I

60

-

-

V

I

0.8

-

2

T

0.3

-

-

V

GS(th)

Gate – Source threshold Voltage

T

-

-

2.5

V

V

V

-

-

±100

I

GSS

Gate – Source Leakage Current

T

-

-

±500

nA

V

V

-

-

1.0

I

DSS

Zero Gate Voltage Drain Current

T

-

-

100

µA

I

D(on)

V

V

1.5

-

-

A

V

I

-

-

5

V

I

-

-

3

R

DS(on)

T

-

-

5.6

Ω

g

FS

V

I

170

-

-

ms

V

SD

V

I

0.7

-

1.6

V

t

rr

Body Diode Reverse Recovery

V

I

-

350

-

ns

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

-

-

50

C

oss

Output Capacitance

-

-

40

C

rss

Reverse Transfer Capacitance

V

f = 1.0MHz

V

-

-

10

pF

T

d(on)

Turn-On Delay

-

-

10

T

d(off)

Turn-Off Delay Time

V

R

I

(Note 3)

-

-

10

ns