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MG9411-R Scheda tecnica(PDF) 2 Page - Seme LAB |
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MG9411-R Scheda tecnica(HTML) 2 Page - Seme LAB |
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2 / 5 page ![]() SILICON EPITAXIAL PNP TRANSISTOR MG9411, MG9411-R Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9099 Issue 1 Page 2 of 5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Units ICBO Collector-Cut-Off Current MG9411 VCB = -230V -10 µA MG9411-R VCB = -260V IEBO Emitter-Cut-Off-Current VEB = -5V -10 µA V(BR)CEO Collector-Base Breakdown Voltage IC = -25mA MG9411 -230 V MG9411-R -260 VCE(sat) (1) Collector-Emitter Saturation Voltage IC = -5A IB = -0.5A -0.5 V hFE Forward-current transfer ratio IC = -5A VCE = -4V 70 140 DYNAMIC CHARACTERISTICS fT Transition Frequency IE = 2A VCE = -12V 35 MHz COB Output Capacitance VCB = -10V f = 1.0MHz 500 pF Notes Notes Notes Notes Pulse Width ≤ 300us, δ ≤ 2%t |
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