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DA811A/K Scheda tecnica(PDF) 2 Page - Diotec Semiconductor |
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DA811A/K Scheda tecnica(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() DA811A/K ... DA8110A/K (1.2 W) Characteristics Kennwerte Forward voltage Durchlass-Spannung Tj = 25°C IF = 1 A VF < 1.1 V 1) Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM IR IR < 10 µA < 90 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 85 K/W 2) 1 Per diode – Pro Diode 2 Valid, if leads are kept at ambient temperature at a distance of 3 mm from case Gültig, wenn die Anschlussdrähte in 3 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 [°C] T A 150 100 50 0 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 30a-(1a-1.1v) |
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