STD16N65M5 datasheet(3/19 Pages) STMICROELECTRONICS

Il numero della parte	STD16N65M5

Spiegazioni elettronici	N-channel 650 V, 0.230 Ω, 12 A MDmesh??V Power MOSFET in D²PAK, DPAK

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STB16N65M5, STD16N65M5

Electrical ratings

Doc ID 18146 Rev 2

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

7.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

200

dv/dt (2)

ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

D²PAK

Rthj-case Thermal resistance junction-case max

1.38

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

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