Characteristics

STPS10M80C

2/11

Doc ID 018734 Rev 1

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

Table 2.

otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

80

V

30

A

Average forward current,

δ = 0.5

TO-220AB,

Per diode

Per device

5

10

A

TO-220FPAB

Per diode

Per device

5

10

Surge non repetitive

forward current

150

A

(1)

1.

For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

4000

W

(2)

2.

See Figure 13

Maximum repetitive peak

avalanche voltage

100

V

(2)

Maximum single pulse

peak avalanche voltage

100

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

TO-220AB

per diode

3.10

°C/W

total

1.88

TO-220FPAB

per diode

5.90

total

4.75

Coupling

TO-220AB

0.65

°C/W

TO-220FPAB

3.60

dPtot

dTj

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1

Rth(j-a)