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HMC616LP3E Scheda tecnica(PDF) 9 Page - Hittite Microwave Corporation |
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HMC616LP3E Scheda tecnica(HTML) 9 Page - Hittite Microwave Corporation |
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9 / 10 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 7 - 9 pin Number function Description interface schematic 1, 3 - 5, 7, 9, 10, 12 - 14, 16 N/C No connection required. These pins may be connected to rf/DC ground without affecting performance. 2 rfiN This pin is DC coupled. DC blocking capacitor required. see application circuit. 6 GND This pin and ground paddle must be connected to rf/DC ground. 11 rfoUT This pin is matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage. Choke inductor and bypass capacitors are required. see application circuit. Pin Descriptions Application Circuit HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Components for Selected Frequencies Tuned frequency 175 - 230 mHz 230 - 660 mHz rbias 2.0k ohms 3.92k ohms l1 82 nH 47 nH l2 82 nH 51 nH |
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