2N3773 datasheet(1/3 Pages) ISC

Il numero della parte	2N3773

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N3773

DESCRIPTION

・With TO-3 package

・Complement to type 2N6609

・High DC current gain

・Low saturation voltage

・High safe operating area

APPLICATIONS

・Designed for high power audio, disk head

positioners and other linear applications.

These devices can also be used in power

switching circuits such as relay or solenoid

drivers, dc to dc converters or inverters.

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

160

V

VCEO

Collector-emitter voltage

Open base

140

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

16

A

ICM

Collector current-peak

30

A

IB

Base current

4

A

IBM

Base current-peak

15

A

PD

Total Power Dissipation

Derate above 25℃

TC=25℃

150

0.855

W

W/℃

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

Fig.1 simplified outline (TO-3) and symbol

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Mospec Semiconductor	2N3773	143Kb / 3P	POWER TRANSISTORS(16A,140V,150W)
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