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2N5598 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5598 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5598 60 2N5600/5602 80 VCEO(SUS) Collector-emitter sustaining voltage 2N5604 IC=50mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA 2N5598/5602 70 200 hFE DC current gain 2N5600/5604 IC=1A ; VCE=5V 30 90 2N5598/5602 60 fT Transition frequency 2N5600/5604 IC=0.5A ; VCE=10V 50 MHz |
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