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2N5655 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2N5655
Spiegazioni elettronici  Silicon NPN Power Transistors
PDF  3 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5655 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5655 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5655 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5655 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5655
250
2N5656
300
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5657
IC=0.1A; IB=0;L=50mH
350
V
VCEsat-1
Collector-emitter saturation voltage
IC=100mA ;IB=10mA
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=250mA ;IB=25mA
2.5
V
VCEsat-3
Collector-emitter saturation voltage
IC=500mA ;IB=100mA
10
V
VBE
Base-emitter on voltage
IC=100mA ; VCE=10V
1.0
V
2N5655
VCE=150V; IB=0
2N5656
VCE=200V; IB=0
ICEO
Collector cut-off current
2N5657
VCE=250V; IB=0
0.1
mA
2N5655
VCB=275V; IE=0
2N5656
VCB=325V; IE=0
ICBO
Collector cut-off current
2N5657
VCB=375V; IE=0
10
μA
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=100℃
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE-1
DC current gain
IC=50mA ; VCE=10V
25
hFE-2
DC current gain
IC=100mA ; VCE=10V
30
250
hFE-3
DC current gain
IC=250mA ; VCE=10V
15
hFE-4
DC current gain
IC=500mA ; VCE=10V
5
fT
Transition frequency
IC=50mA ; VCE=10V;f=10MHz
10
MHz
COB
Output capacitance
f=100kHz ; VCB=10V;IE=0
25
pF



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