2N5671 datasheet(1/3 Pages) ISC

Il numero della parte	2N5671

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5671 2N5672

DESCRIPTION

・With TO-3 package

・High current ,high speed

APPLICATIONS

・Intended for high current and fast

switching industrial applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5671

120

VCBO

Collector-base voltage

2N5672

Open emitter

150

V

2N5671

90

VCEO

Collector-emitter voltage

2N5672

Open base

120

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

30

A

IB

Base current

10

A

PD

Total Power Dissipation

TC=25℃

140

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.25

℃/W

Fig.1 simplified outline (TO-3) and symbol

Codice articolo simile - 2N5671

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Mospec Semiconductor	2N5671	125Kb / 3P	POWER TRANSISTORS(30A,140W)
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2N5671 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

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