2N5885 datasheet(1/2 Pages) ISC

Il numero della parte	2N5885

Spiegazioni elettronici	isc Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

2N5885/5886

DESCRIPTION

·DC Current Gain-

: hFE= 20(Min)@IC= 10A

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 15A

·Complement to Type 2N5883/5884

APPLICATIONS

·Designed for general purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.875

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

2N5885

60

VCBO

Collector-Base Voltage

2N5886

80

V

2N5885

60

VCEO

Collector-Emitter Voltage

2N5886

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

25

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continuous

7.5

A

PC

Collector Power Dissipation @TC=25℃

200

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

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