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2N6263 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6263 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6263 2N6264 DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・A wide variety of medium-to-high power, high-voltage applications ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6263 140 VCBO Collector-base voltage 2N6264 Open emitter 170 V 2N6263 120 VCEO Collector-emitter voltage 2N6264 Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 4 A IB Base current 2 A 2N6263 20 PT Total power dissipation 2N6264 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT 2N6263 8.75 Rth j-C Thermal resistance junction to case 2N6264 3.5 ℃/W Fig.1 simplified outline (TO-66) and symbol |
Codice articolo simile - 2N6263 |
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Descrizione simile - 2N6263 |
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