2N6372 datasheet(1/3 Pages) ISC

Il numero della parte	2N6372

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6372 2N6373 2N6374

DESCRIPTION

・With TO-66 package

・Low collector saturation voltage

・Excellent safe operating area

APPLICATIONS

・Designed for switching and wide-band

amplifier applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6372

90

2N6373

70

VCBO

Collector-base voltage

2N6374

Open emitter

50

V

2N6372

80

2N6373

60

VCEO

Collector-emitter voltage

2N6374

Open base

40

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

6

A

PD

Total Power Dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

4.37

℃/W

Fig.1 simplified outline (TO-66) and symbol

Codice articolo simile - 2N6372

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Central Semiconductor C...	2N6372	114Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
Central Semiconductor C...	2N6372	51Kb / 1P	Power Transistors
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Seme LAB	2N6372	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO66

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Descrizione simile - 2N6372

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2N6372 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

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Codice articolo simile - 2N6372

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