2SB676 datasheet(1/3 Pages) ISC

Il numero della parte	2SB676

Spiegazioni elettronici	Silicon PNP Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB676

DESCRIPTION

・With TO-220C package

・High DC Current Gain

: hFE=2000 @VCE=-2V, IC=-1A (Min.)

・DARLINGTON

APPLICATIONS

・For switching applications

・Hammer drive, pulse motor drive applications

・Power amplifier applications

PINNING

DESCRIPTION

1

Base

2

Collector; connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current-DC

-4

A

PC

Collector power dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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