: 600V

Mar. 2011. Rev. 2.0

1/7

: 0.7ohm

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

SW

N60

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 58nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220F

Drain to Source Voltage

600

V

12.0

12.0*

A

7.0

7.0*

A

Drain current pulsed

(note 1)

48

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

960

mJ

Repetitive Avalanche Energy

(note 1)

22.5

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5.0

V/ns

165

52*

W

1.32

0.42

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

Thermal resistance, Junction to case

0.76

2.4

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

62.5

*. Drain current is limited by junction temperature.

BV

DSS

I

D

: 12.0A

R

DS(ON)

1. Gate 2. Drain 3. Source

TO-220F

TO-220

1

2

3

SAMWIN

1

2

3

1

2

3