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SWB100N03 Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWB100N03 Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize R DS(ON), low gate charge and high rugged avalanche characteristics. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 30 V I D Continuous Drain Current 100 A I DM Drain current pulsed (note 1) 400 A V GS Gate to Source Voltage ± 20 V E AS Single pulsed Avalanche Energy (note 2) 875 mJ P D Total power dissipation (@T C=25 oC) 100 W Derating Factor above 25oC 0.67 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit Min. Typ. Max. R thjc Thermal resistance, Junction to case 1.5 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 62.5 oC/W Jun. 2011. Rev. 2.0 1/5 BV DSS : 30V I D : 100A R DS(ON) : 5.3 mΩ 1 2 3 1. Gate 2. Drain 3. Source 1 2 3 TO-220 SW100N03 SAMWIN Item Sales Type Marking Package Packaging 1 SW P 100N03 SW100N03 TO-220 TUBE 2 SW I 100N03 SW100N03 TO-251 TUBE 3 SW D 100N03 SW100N03 TO-252 REEL 4 SW B 100N03 SW100N03 TO-263 REEL Order Codes TO-263 TO-251 TO-252 1 2 3 1 2 3 1 2 3 |
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