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SWP4N65 Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Il numero della parte SWP4N65
Spiegazioni elettronici  N-channel MOSFET (TO-220F , TO-220)
PDF  7 Pages
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Produttore elettronici  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Homepage  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWP4N65 Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Features
■ High ruggedness
■ R
DS(ON) (Max 2.6 Ω)@VGS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel MOSFET
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220F
V
DSS
Drain to Source Voltage
650
V
I
D
Continuous Drain Current (@T
C=25
oC)
4.0
4.0*
A
Continuous Drain Current (@T
C=100
oC)
2.6
2.5*
A
I
DM
Drain current pulsed
(note 1)
16
A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy
(note 2)
164
mJ
E
AR
Repetitive Avalanche Energy
(note 1)
10.6
mJ
dv/dt
Peak diode Recovery dv/dt
(note 3)
4.5
V/ns
P
D
Total power dissipation (@T
C=25
oC)
100
40*
W
Derating Factor above 25oC
0.78
0.32
W/oC
T
STG, TJ
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
oC
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Symbol
Parameter
Value
Unit
TO-220
TO-220F
R
thjc
Thermal resistance, Junction to case
1.25
3.16
oC/W
R
thcs
Thermal resistance, Case to Sink
0.5
oC/W
R
thja
Thermal resistance, Junction to ambient
62.5
oC/W
Mar. 2011. Rev. 2.0
1/7
*. Drain current is limited by junction temperature.
BV
DSS : 650V
I
D
: 4.0A
R
DS(ON) : 2.6ohm
1. Gate 2. Drain 3. Source
1
2
3
TO-220F
1
2
3
TO-220
SW4N65
SAMWIN
1
2
3
Item
Sales Type
Marking
Package
Packaging
1
SW P4N65
SW4N65
TO-220
TUBE
2
SW F 4N65
SW4N65
TO-220F
TUBE
Order Codes


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