2SB1225 datasheet(1/3 Pages) ISC

Il numero della parte	2SB1225

Spiegazioni elettronici	Silicon PNP Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1225

DESCRIPTION

・With TO-220F package

・Complement to type 2SD1827

・High DC current gain.

・Large current capacity and wide ASO.

・Low saturation voltage.

・DARLINGTON

APPLICATIONS

・Suitable for use in control of motor drivers,

printer hammer drivers, relay drivers, and

constant-voltage regulators.

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-70

V

VCEO

Collector-emitter voltage

Open base

-60

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-10

A

ICM

Collector current-peak

-15

A

TC=25℃

30

PC

Collector dissipation

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220F) and symbol

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