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2SC681 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC681 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC681 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website:www.iscsemi.cn |
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