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2SC2233 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2233 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A B 1.5 V μA ICBO Collector Cutoff Current VCB= 170V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 hFE -1 DC Current Gain IC= 1A ; VCE= 5V 30 150 hFE -2 DC Current Gain IC= 4A ; VCE= 5V 20 fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V 8 MHz isc Website:www.iscsemi.cn 2 |
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