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2SC2616 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2616 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2616 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 0.2A; RBE= ∞; L= 100mH 400 V VCEX(SUS) Collector-Emitter Sustainig Voltage IC= 5A; IB1=-IB2= 1A, VBE= -5V; L=180μH,clamped 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.7 V hFE-1 DC Current Gain IC= 5A; VCE= 5V 15 hFE-2 DC Current Gain IC= 10A; VCE= 5V 7 ICBO Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 350V; RBE= ∞ 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA Switching Times tr Rise Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 10A; IB1= -IB2= 2A, VCC≈ 150V 1.0 μs isc Website:www.iscsemi.cn |
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