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2SC2654 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2654 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.6 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3A ; VCE= 1V 40 320 hFE-2 DC Current Gain IC= 5A ; VCE= 1V 20 Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 5A ,RL= 4Ω, IB1= -IB2= 0.5A,VCC≈ 20V 1.0 μs hFE-1 Classifications M L K J 40-80 60-120 100-200 160-320 isc Website:www.iscsemi.cn 2 |
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