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2SC3163 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3163 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3163 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=400V ;IB=0 100 μA ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz |
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