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2SC3527 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3527 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A; VCE= 5V 15 hFE-2 DC Current Gain IC= 7A; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; f= 1MHz 15 MHz Switching times ton Turn-On Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 7A; IB1= 1.4A, IB2= -1.4A; VCC= 125V 1.0 μs isc Website:www.iscsemi.cn 2 |
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