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Motore di ricerca datesheet componenti elettronici |
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2SC3835G Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3835G Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB B Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
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