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2SC4004 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4004 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4004 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 800 V VCEsat Collector-emitter saturation voltage IC=0.2A ;IB=0.04A 1.5 V VBEsat Base-emitter saturation voltage IC=0.2A; IB=0.04A 1.0 V ICBO Collector cut-off current VCB=900V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=0.05A ; VCE=5V 6 hFE-2 DC current gain IC=0.5A ; VCE=5V 3 fT Transition frequency IC=0.05A; VCE=10V;f=1MHz 4 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V 1.0 μs |
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