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2SC4153 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4153 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4153 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.2 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=8V; IC=0 0.1 mA hFE-1 DC current gain IC=0.6A ; VCE=4V 70 250 hFE-2 DC current gain IC=3A ; VCE=4V 70 220 fT Transition frequency IE=-0.5A ; VCE=12V 30 MHz COB Collector output capacitance f=1MHz;VCB=10V 110 pF Switching times ton Turn-on time 0.5 μs ts Storage time 3.0 μs tf Fall time IC=3A IB1=0.3A ,IB2=-0.6A VCC=50V, RL=16.7Ω 0.5 μs |
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