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2SC4434 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4434 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4434 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.3 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 8A; VCE= 4V 10 25 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 135 pF fT Current-Gain—Bandwidth Product IE= -1.5A; VCE= 12V 10 MHz Switching Times ton Turn-On Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 8A; IB1= 1.6A; IB2= -3.2A; VCC= 200V; RL= 25Ω 0.15 μs isc Website:www.iscsemi.cn 2 |
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