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2SD904 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD904 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD904 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 7 A ICM Collector Current- Peak 10 A Collector Power Dissipation @ Ta= 25℃ 3 PC Collector Power Dissipation @ TC= 25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc Website:www.iscsemi.cn |
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