2SD1196 datasheet(1/3 Pages) ISC

Il numero della parte	2SD1196

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1196

DESCRIPTION

・

With TO-220 package

・

High DC current gain.

・

High current capacity and wide ASO.

・

Low saturation voltage

・

DARLINGTON

APPLICATIONS

・

Motor drivers, printer hammer drivers,

relay drivers,voltage regulator control.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

110

V

VCEO

Collector-emitter voltage

Open base

100

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

8

A

ICM

Collector current-peak

12

A

1.75

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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2SD1196 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD1196 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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