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2SD1518 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1518 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1518 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 8 hFE-2 DC Current Gain IC= 0.6A; VCE= 5V 10 40 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 5 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 75 pF tf Fall Time IC= 2.5A; IB1= 0.5A; IB2= -1A 0.5 μs isc Website:www.iscsemi.cn 2 |
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