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2SD1850 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1850 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 20 A IB B Base Current- Continuous 3 A Collector Power Dissipation @Ta=25℃ 3 PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc Website:www.iscsemi.cn |
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