BD142 datasheet(1/3 Pages) ISC

Il numero della parte	BD142

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD142

DESCRIPTION

・With TO-3 package

・Low collector saturation voltage

・High dissipation rating

APPLICATIONS

・LF large signal power amplification

・Intended for a wide variety of intermediate

power applications.

・Suited for use in audio and inverter circuits

at 12V

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

45

V

VCEO

Collector-emitter voltage

Open base

45

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

15

A

IB

Base current

7

A

PT

Total power dissipation

TC=25℃

117

W

Tj

Junction temperature

-65~200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.5

℃/W

Fig.1 simplified outline (TO-3) and symbol

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