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BD533 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BD533
Spiegazioni elettronici  Silicon NPN Power Transistors
PDF  3 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD533 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD533 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD533 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD533 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BD533/535/537
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat-1
Collector-emitter saturation voltage
IC=2 A;IB=0.2 A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=6 A;IB=0.6 A
0.8
V
VBE
Base-emitter on voltage
IC=2A ; VCE=2V
1.5
V
BD533
VCB=45V; IE=0
BD535
VCB=60V; IE=0
ICBO
Collector cut-off current
BD537
VCB=80V; IE=0
0.1
mA
BD533
VCE=45V; VBE=0
BD535
VCE=60V; VBE=0
ICES
Collector cut-off current
BD537
VCE=80V; VBE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
BD533/535
20
hFE-1
DC current gain
BD537
IC=10mA ; VCE=5V
15
hFE-2
DC current gain
IC=0.5A ; VCE=2V
40
Group: J
30
75
hFE-3
DC current gain
(All device)
Group: K
IC=2A ; VCE=2V
40
100
Group: J
15
hFE-4
DC current gain
(All device)
Group: K
IC=3A ; VCE=2V
20
fT
Transition frequency
IC=0.5A ; VCE=1V
3
12
MHz



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