BD900 datasheet(1/3 Pages) ISC

Il numero della parte	BD900

Spiegazioni elettronici	Silicon PNP Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD896/898/900/902

DESCRIPTION

・With TO-220C package

・Complement to type BD895/897/899/901

・DARLINGTON

APPLICATIONS

・For use in output stages in audio equipment,

general amplifier,and analogue switching

applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD896

-45

BD898

-60

BD900

-80

VCBO

Collector-base voltage

BD902

Open emitter

-100

V

BD896

-45

BD898

-60

BD900

-80

VCEO

Collector-emitter voltage

BD902

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current-DC

-8

A

IB

Base current

-300

mA

TC=25℃

70

PT

Total power dissipation

Ta=25℃

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

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BD900 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

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