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BDX54F Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX54F Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX54F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 B -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -10mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -10mA B -2.5 V VECF C-E Diode Forward Voltage IF= -2A -2.5 V ICEO Collector Cutoff Current VCE= -80V; IB= 0 B -0.5 mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 500 hFE-2 DC Current Gain IC= -3A ; VCE= -5V 150 isc Website:www.iscsemi.cn 2 |
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