BDX67C datasheet(1/3 Pages) ISC

Il numero della parte	BDX67C

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX67C

DESCRIPTION

・With TO-3 package

・High current capability

・DARLINGTON

APPLICATIONS

・Designed for power amplification and

switching application.

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

140

V

VCEO

Collector-emitter voltage

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

16

A

ICM

Collector current(peak)

20

A

IB

Base current

0.25

A

PT

Total power dissipation

TC=25℃

117

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.17

℃/W

Fig.1 simplified outline (TO-3) and symbol

Codice articolo simile - BDX67C

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Seme LAB	BDX67C	24Kb / 2P	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
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BDX67C Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

BDX67C Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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