BU208A datasheet(1/3 Pages) ISC

Il numero della parte	BU208A

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU208A

DESCRIPTION

・

・With TO-3 package

・High voltage ,high speed

APPLICATIONS

・For use in horizontal deflection output

stages for color TV receives.

PINNING(see fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

5

A

ICM

Collector current-peak

7.5

A

IB

Base current

0.1

A

IBM

Base current-peak

2.5

A

PT

Total power dissipation

TC=25℃

150

W

Tj

Junction temperature

115

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance junction to case

1. 0

℃/W

Fig.1 simplified outline (TO-3) and symbol

Codice articolo simile - BU208A

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Mospec Semiconductor	BU208A	117Kb / 3P	POWER TRANSISTORS(5.0A,1300-1500V,55W)
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BU208A Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

BU208A Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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