BU323 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon Darlington NPN Power Transistor

BU323

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 10mH

350

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 60mA

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 6 A; IB= 120mA

1.7

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 10 A; IB= 300mA

2.7

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 6 A; IB= 120mA

2.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 10 A; IB= 300mA

3.0

VBE(on)

Base-Emitter On Voltage

IC= 10A ; VCE= 6V

2.5

ICER

Collector Cutoff Current

VCER= RatedVCER;RBE= 100Ω

1.0

ICBO

Collector Cutoff Current

VCB= RatedVCBO; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE-1

DC Current Gain

IC= 3A; VCE= 6V

300

hFE-2

DC Current Gain

IC= 6A; VCE= 6V

150

2000

hFE-3

DC Current Gain

IC= 10A; VCE= 6V

VECF

C-E Diode Forward Voltage

IF= 10A

3.5

COB

Output Capacitance

IE= 0; VCB= 10V; f= 100kHz

165

Switching Times

Storage Time

μs

Fall Time

VCC= 12V; IC= 6A,

IB1= -IB2= 0.3A

μs

isc Website：www.iscsemi.cn

BU323 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

BU323 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Scheda tecnica Scarica

Link URL