BU508DFI datasheet(1/3 Pages) ISC

Il numero della parte	BU508DFI

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508DFI

DESCRIPTION

・With TO-3PML package

・High voltage,high speed

・Built-in damper diode

APPLICATIONS

・For use in horizontal deflection circuits

of colour TV receivers.

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

10

V

IC

Collector current (DC)

8

A

ICP

Collector current (Pulse)

15

A

Ptot

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance junction to case

2.5

℃/W

Fig.1 simplified outline (TO-3PML) and symbol

Codice articolo simile - BU508DFI

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	BU508DFI	75Kb / 8P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Jun-1998
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BU508DFI Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

BU508DFI Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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