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BU931P Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU931P Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU931P CHARACT ERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH 400 V VCEsat-1 Collector-emitter saturation voltage IC=7A ;IB=0.07A 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.1 A 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=0.25 A 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A ;IB=0.07A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.1 A 2.4 V VBEsat-3 Base-emitter saturation voltage IC=10A; IB=0.25 A 2.5 V ICES Collector cut-off current VCE =500V; VBE=0; Tj=125℃ 0.1 0.5 mA ICEO Collector cut-off current VCE =450V; IB=0; Tj=125℃ 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V 300 VF Diode forward voltage IF=10A 2.5 V |
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