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BU941P Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU941P Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941P DESCRIPTION ・ ・With TO-3PN package ・DARLINGTON ・High breakdown voltage APPLICATIONS ・High ruggedness electronic ignitions. ・High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current -peak 30 A IB Base current 1 A IBM Base current-peak 5 A Ptot Total power dissipation TC=25℃ 155 W Tj Max.operating junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 0.97 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
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